| Mechanism of laser-induced size-reduction of gold nanoparticles as studied by nanosecond transient absorption spectroscopy K Yamada, Y Tokumoto, T Nagata, F Mafuné The Journal of Physical Chemistry B 110 (24), 11751-11756, 2006 | 135 | 2006 |
| Control of grain boundary propagation in mono-like Si: Utilization of functional grain boundaries K Kutsukake, N Usami, Y Ohno, Y Tokumoto, I Yonenaga Applied Physics Express 6 (2), 025505, 2013 | 52 | 2013 |
| Mono-like silicon growth using functional grain boundaries to limit area of multicrystalline grains K Kutsukake, N Usami, Y Ohno, Y Tokumoto, I Yonenaga IEEE Journal of Photovoltaics 4 (1), 84-87, 2013 | 48 | 2013 |
| Dislocation conduction in Bi-Sb topological insulators H Hamasaki, Y Tokumoto, K Edagawa Applied Physics Letters 110 (9), 2017 | 40 | 2017 |
| Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities T Taishi, H Ise, Y Murao, T Osawa, M Suezawa, Y Tokumoto, Y Ohno, ... Journal of Crystal Growth 312 (19), 2783-2787, 2010 | 35 | 2010 |
| Three-dimensional evaluation of gettering ability of Σ3 {111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy Y Ohno, K Inoue, Y Tokumoto, K Kutsukake, I Yonenaga, N Ebisawa, ... Applied Physics Letters 103 (10), 2013 | 32 | 2013 |
| Impurity effects on the generation and velocity of dislocations in Ge Y Murao, T Taishi, Y Tokumoto, Y Ohno, I Yonenaga Journal of Applied Physics 109 (11), 2011 | 32 | 2011 |
| Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils H Kim, J Ohta, K Ueno, A Kobayashi, M Morita, Y Tokumoto, H Fujioka Scientific reports 7 (1), 2112, 2017 | 30 | 2017 |
| Interaction of dopant atoms with stacking faults in silicon crystals Y Ohno, T Taishi, Y Tokumoto, I Yonenaga Journal of Applied Physics 108 (7), 2010 | 29 | 2010 |
| Fabrication of electrically conductive nanowires using high-density dislocations in AlN thin films Y Tokumoto, S Amma, N Shibata, T Mizoguchi, K Edagawa, T Yamamoto, ... Journal of Applied Physics 106 (12), 2009 | 25 | 2009 |
| Cellular structures in Czochralski-grown SiGe bulk crystal I Yonenaga, T Taishi, Y Ohno, Y Tokumoto Journal of crystal growth 312 (8), 1065-1068, 2010 | 22 | 2010 |
| Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors I Yonenaga, Y Ohno, T Taishi, Y Tokumoto Physica B: Condensed Matter 404 (23-24), 4999-5001, 2009 | 21 | 2009 |
| Atomic structure of AlN/Al2O3 interfaces fabricated by pulsed-laser deposition Y Tokumoto, Y Sato, T Yamamoto, N Shibata, Y Ikuhara Journal of materials science 41 (9), 2553-2557, 2006 | 19 | 2006 |
| Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation Y Tokumoto, K Kutsukake, Y Ohno, I Yonenaga Journal of Applied Physics 112 (9), 2012 | 18 | 2012 |
| High-resolution transmission electron microscopy (HRTEM) observation of dislocation structures in AlN thin films Y Tokumoto, N Shibata, T Mizoguchi, M Sugiyama, Y Shimogaki, JS Yang, ... Journal of Materials Research 23 (8), 2188-2194, 2008 | 18 | 2008 |
| RF–MBE growth and structural characterization of cubic InN films on yttria-stabilized zirconia (0 0 1) substrates T Nakamura, Y Tokumoto, R Katayama, T Yamamoto, K Onabe Journal of crystal growth 301, 508-512, 2007 | 18 | 2007 |
| Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides I Yonenaga, Y Ohkubo, M Deura, K Kutsukake, Y Tokumoto, Y Ohno, ... AIP Advances 5 (7), 2015 | 17 | 2015 |
| Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth K Kutsukake, H Ise, Y Tokumoto, Y Ohno, K Nakajima, I Yonenaga Journal of crystal growth 352 (1), 173-176, 2012 | 14 | 2012 |
| Optical properties of fresh dislocations in GaN I Yonenaga, Y Ohno, T Taishi, Y Tokumoto, H Makino, T Yao, Y Kamimura, ... Journal of crystal growth 318 (1), 415-417, 2011 | 14 | 2011 |
| Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique S Amma, Y Tokumoto, K Edagawa, N Shibata, T Mizoguchi, T Yamamoto, ... Applied Physics Letters 96 (19), 2010 | 12 | 2010 |
