| Large-area synthesis of high-quality and uniform graphene films on copper foils X Li, W Cai, J An, S Kim, J Nah, D Yang, R Piner, A Velamakanni, I Jung, ... science 324 (5932), 1312-1314, 2009 | 11196 | 2009 |
| Realization of a high mobility dual-gated graphene field-effect transistor with dielectric S Kim, J Nah, I Jo, D Shahrjerdi, L Colombo, Z Yao, E Tutuc, SK Banerjee Applied Physics Letters 94 (6), 062107, 2009 | 1102 | 2009 |
| The role of surface oxygen in the growth of large single-crystal graphene on copper Y Hao, MS Bharathi, L Wang, Y Liu, H Chen, S Nie, X Wang, H Chou, ... Science 342 (6159), 720-723, 2013 | 964 | 2013 |
| Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers S Larentis, B Fallahazad, E Tutuc Applied Physics Letters 101 (22), 223104, 2012 | 449 | 2012 |
| Spectrally selective chiral silicon metasurfaces based on infrared Fano resonances C Wu, N Arju, G Kelp, JA Fan, J Dominguez, E Gonzales, E Tutuc, I Brener, ... Nature communications 5 (1), 1-9, 2014 | 359 | 2014 |
| Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing E Tutuc, M Shayegan, DA Huse Physical review letters 93 (3), 036802, 2004 | 342 | 2004 |
| Evidence for moiré excitons in van der Waals heterostructures K Tran, G Moody, F Wu, X Lu, J Choi, K Kim, A Rai, DA Sanchez, J Quan, ... Nature 567 (7746), 71-75, 2019 | 337 | 2019 |
| Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device SK Banerjee, LF Register, E Tutuc, D Reddy, AH MacDonald IEEE Electron Device Letters 30 (2), 158-160, 2008 | 262 | 2008 |
| van der Waals heterostructures with high accuracy rotational alignment K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ... Nano letters 16 (3), 1989-1995, 2016 | 250 | 2016 |
| Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene K Kim, A DaSilva, S Huang, B Fallahazad, S Larentis, T Taniguchi, ... Proceedings of the National Academy of Sciences 114 (13), 3364-3369, 2017 | 245 | 2017 |
| Coulomb drag of massless fermions in graphene S Kim, I Jo, J Nah, Z Yao, SK Banerjee, E Tutuc Physical Review B 83 (16), 161401, 2011 | 198 | 2011 |
| Resistance spikes at transitions between quantum Hall ferromagnets EP De Poortere, E Tutuc, SJ Papadakis, M Shayegan Science 290 (5496), 1546-1549, 2000 | 188 | 2000 |
| High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ... ACS nano 9 (10), 10402-10410, 2015 | 174 | 2015 |
| Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2 CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee Acs Nano 9 (1), 363-370, 2015 | 147 | 2015 |
| Anomalous Rashba spin splitting in two-dimensional hole systems R Winkler, H Noh, E Tutuc, M Shayegan Physical Review B 65 (15), 155303, 2002 | 144 | 2002 |
| Gate-tunable resonant tunneling in double bilayer graphene heterostructures B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ... Nano letters 15 (1), 428-433, 2015 | 141 | 2015 |
| Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field YP Shkolnikov, EP De Poortere, E Tutuc, M Shayegan Physical review letters 89 (22), 226805, 2002 | 137 | 2002 |
| Hubbard model physics in transition metal dichalcogenide moiré bands F Wu, T Lovorn, E Tutuc, AH MacDonald Physical review letters 121 (2), 026402, 2018 | 134 | 2018 |
| Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with gate dielectric D Shahrjerdi, E Tutuc, SK Banerjee Applied Physics Letters 91 (6), 063501, 2007 | 133 | 2007 |
| In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems E Tutuc, EP De Poortere, SJ Papadakis, M Shayegan Physical review letters 86 (13), 2858, 2001 | 133 | 2001 |
Babak FallahazadSoC Device Engineer, IntelVerified email at intel.com
