Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ... IEEE Electron Device Letters 31 (7), 731-733, 2010 | 284 | 2010 |
FinFET performance advantage at 22nm: An AC perspective M Guillorn, J Chang, A Bryant, N Fuller, O Dokumaci, X Wang, J Newbury, ... 2008 Symposium on VLSI Technology, 12-13, 2008 | 123 | 2008 |
Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond S Bangsaruntip, K Balakrishnan, SL Cheng, J Chang, M Brink, I Lauer, ... 2013 IEEE international electron devices meeting, 20.2. 1-20.2. 4, 2013 | 118 | 2013 |
Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node JB Chang, M Guillorn, PM Solomon, CH Lin, SU Engelmann, A Pyzyna, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 12-13, 2011 | 95 | 2011 |
Ultra low contact resistivities for CMOS beyond 10-nm node Z Zhang, SO Koswatta, SW Bedell, A Baraskar, M Guillorn, ... IEEE electron device letters 34 (6), 723-725, 2013 | 50 | 2013 |
Resistivity of copper interconnects beyond the 7 nm node A Pyzyna, R Bruce, M Lofaro, H Tsai, C Witt, L Gignac, M Brink, M Guillorn, ... 2015 Symposium on VLSI Technology (VLSI Technology), T120-T121, 2015 | 31 | 2015 |
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT∼ 7Å and scaled dimensions down … P Hashemi, T Ando, K Balakrishnan, E Cartier, M Lofaro, JA Ott, J Bruley, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 25 | 2016 |
Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitrides M Brink, MA Guillorn, SU Engelmann, H Miyazoe, AM Pyzyna, JW Sleight US Patent 9,437,443, 2016 | 22 | 2016 |
Trench silicide with self-aligned contact vias JB Chang, MA Guillorn, F Liu, AM Pyzyna US Patent 9,721,888, 2017 | 21 | 2017 |
Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping M Guillorn, J Chang, N Fuller, J Patel, M Darnon, A Pyzyna, E Joseph, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 21 | 2009 |
Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits C Kurter, CE Murray, RT Gordon, BB Wymore, M Sandberg, RM Shelby, ... npj Quantum Information 8 (1), 31, 2022 | 20 | 2022 |
Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm2 A Pyzyna, H Tsai, M Lofaro, L Gignac, H Miyazoe, R Bruce, CM Breslin, ... 2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017 | 20 | 2017 |
SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics RA Camillo-Castillo, QZ Liu, JW Adkisson, MH Khater, PB Gray, V Jain, ... 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 227-230, 2013 | 19 | 2013 |
Electrode pair fabrication using directed self assembly of diblock copolymers JB Chang, MA Guillorn, H Miyazoe, AM Pyzyna, H Tsai US Patent 9,306,164, 2016 | 18 | 2016 |
CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond T Ando, E Cartier, P Jamison, A Pyzyna, S Kim, J Bruley, K Chung, ... 2016 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2016 | 12 | 2016 |
Disposable carbon-based template layer for formation of borderless contact structures G Breyta, JB Chang, SU Engelmann, MA Guillorn, DP Klaus, AM Pyzyna US Patent App. 13/585,337, 2014 | 11 | 2014 |
A 0.021 µm2 trigate SRAM cell with aggressively scaled gate and contact pitch MA Guillorn, J Chang, A Pyzyna, S Engelmann, M Glodde, E Joseph, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 64-65, 2011 | 11 | 2011 |
Thermal oxidation-induced strain in silicon nanobeams AM Pyzyna, DR Clarke, NC MacDonald 17th IEEE International Conference on Micro Electro Mechanical Systems …, 2004 | 9 | 2004 |
Thin film deposition research and its impact on microelectronics scaling C Cabral, C Lavoie, C Murray, A Pyzyna, K Rodbell Journal of Vacuum Science & Technology A 38 (4), 2020 | 7 | 2020 |
Subtractive W contact and local interconnect co-integration (CLIC) F Liu, B Fletcher, EA Joseph, Y Zhu, J Gonsalves, W Price, GM Fritz, ... 2013 IEEE International Interconnect Technology Conference-IITC, 1-3, 2013 | 7 | 2013 |