Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices W Li, J Zhou, S Cai, Z Yu, J Zhang, N Fang, T Li, Y Wu, T Chen, X Xie, ...
Nature Electronics 2 (12), 563-571, 2019
331 2019 Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS2 Field‐Effect Transistors N Fang, S Toyoda, T Taniguchi, K Watanabe, K Nagashio
Advanced Functional Materials 29 (49), 1904465, 2019
60 2019 2D Tunnel Field Effect Transistors (FETs) with a Stable Charge‐Transfer‐Type p+ ‐WSe2 Source J He, N Fang, K Nakamura, K Ueno, T Taniguchi, K Watanabe, ...
Advanced Electronic Materials 4 (7), 1800207, 2018
50 2018 Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor N Fang, K Nagashio
Journal of Physics D: Applied Physics 51 (6), 065110, 2018
44 2018 Accumulation-mode two-dimensional field-effect transistor: operation mechanism and thickness scaling rule N Fang, K Nagashio
ACS applied materials & interfaces 10 (38), 32355-32364, 2018
37 2018 Hexagonal boron nitride as an ideal substrate for carbon nanotube photonics N Fang, K Otsuka, A Ishii, T Taniguchi, K Watanabe, K Nagashio, YK Kato
ACS Photonics 7 (7), 1773-1779, 2020
31 2020 Deterministic transfer of optical-quality carbon nanotubes for atomically defined technology K Otsuka, N Fang, D Yamashita, T Taniguchi, K Watanabe, YK Kato
Nature Communications 12 (1), 3138, 2021
29 2021 Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics N Fang, K Nagashio, A Toriumi
2D Materials 4 (1), 015035, 2016
21 2016 Subthreshold transport in mono-and multilayered MoS2 FETs F Nan, K Nagashio, A Toriumi
Applied Physics Express 8 (6), 065203, 2015
18 2015 Direct observation of electron capture and emission processes by the time domain charge pumping measurement of MoS2 FET K Taniguchi, N Fang, K Nagashio
Applied Physics Letters 113 (13), 2018
15 2018 Quantization of mode shifts in nanocavities integrated with atomically thin sheets N Fang, D Yamashita, S Fujii, K Otsuka, T Taniguchi, K Watanabe, ...
Advanced Optical Materials 10 (19), 2200538, 2022
13 2022 Quantum-mechanical effect in atomically thin MoS2 FET N Fang, K Nagashio
2D Materials 7 (1), 014001, 2019
13 2019 SiC 衬底上石墨烯的性质, 改性及应用研究 方楠， 刘风， 刘小瑞， 廖瑞娴， 缪灵， 江建军
化学学报 70 (21), 2197, 2012
9 2012 Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes N Fang, YR Chang, D Yamashita, S Fujii, M Maruyama, Y Gao, CF Fong, ...
Nature communications 14 (1), 8152, 2023
5 2023 Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures N Fang, YR Chang, S Fujii, D Yamashita, M Maruyama, Y Gao, CF Fong, ...
Nature Communications 15 (1), 2871, 2024
4 2024 Van der Waals functionalization of ultrahigh-Q silica microcavities for S Fujii, N Fang, D Yamashita, D Kozawa, CF Fong, YK Kato
arXiv preprint arXiv:2311.13916, 2023
2 2023 Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices W Li, J Zhou, S Cai, Z Yu, J Zhang, N Fang, T Li, Y Wu, T Chen, X Xie, ...
arXiv preprint arXiv:1909.09753, 2019
2 2019 van der Waals Decoration of Ultra-High-Q Silica Microcavities for χ(2) –χ(3) Hybrid Nonlinear Photonics S Fujii, N Fang, D Yamashita, D Kozawa, CF Fong, YK Kato
Nano Letters 24 (14), 4209-4216, 2024
1 2024 Effects of retrieval schedules on the acquisition of explicit, automatized-explicit, and implicit knowledge of L2 collocations N Fang, I Elgort, Z Chen
Studies in Second Language Acquisition, 1-23, 2024
1 2024 College students’ disciplinary expertise and their entrepreneurial intentions: an exploratory study based on foreign language majors with experience in innovation and … X Dong, N Fang, L Ye
BMC psychology 12 (1), 787, 2024
2024 
Kosuke NagashioThe University of TokyoAdresse e-mail validée de material.t.u-tokyo.ac.jp
