| Compositional dependence of the direct and indirect band gaps in Ge1− ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover … L Jiang, JD Gallagher, CL Senaratne, T Aoki, J Mathews, J Kouvetakis, ... Semiconductor Science and Technology 29 (11), 115028, 2014 | 124 | 2014 |
| Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1− ySny alloys JD Gallagher, CL Senaratne, J Kouvetakis, J Menendez Applied Physics Letters 105 (14), 2014 | 106 | 2014 |
| Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition JD Gallagher, CL Senaratne, P Sims, T Aoki, J Menendez, J Kouvetakis Applied Physics Letters 106 (9), 2015 | 72 | 2015 |
| Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries CL Senaratne, JD Gallagher, T Aoki, J Kouvetakis, J Menendez Chemistry of Materials 26 (20), 6033-6041, 2014 | 68 | 2014 |
| Fundamental band gap and direct-indirect crossover in Ge1-x-ySixSny alloys JD Gallagher, C Xu, L Jiang, J Kouvetakis, J Menéndez Applied Physics Letters 103 (20), 2013 | 65 | 2013 |
| Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications L Jiang, C Xu, JD Gallagher, R Favaro, T Aoki, J Menéndez, J Kouvetakis Chemistry of Materials 26 (8), 2522-2531, 2014 | 56 | 2014 |
| Ge1-ySny (y= 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties CL Senaratne, JD Gallagher, L Jiang, T Aoki, DJ Smith, J Menendez, ... Journal of Applied Physics 116 (13), 2014 | 54 | 2014 |
| Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes CL Senaratne, PM Wallace, JD Gallagher, PE Sims, J Kouvetakis, ... Journal of Applied Physics 120 (2), 2016 | 50 | 2016 |
| Non-radiative recombination in Ge1− ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs JD Gallagher, CL Senaratne, C Xu, P Sims, T Aoki, DJ Smith, J Menendez, ... Journal of Applied Physics 117 (24), 2015 | 37 | 2015 |
| Synthesis and optical properties of Sn-rich Ge1–x–ySixSny materials and devices C Xu, RT Beeler, L Jiang, JD Gallagher, R Favaro, J Menendez, ... Thin Solid Films 557, 177-182, 2014 | 33 | 2014 |
| Ge1− x− ySixSny light emitting diodes on silicon for mid-infrared photonic applications JD Gallagher, C Xu, CL Senaratne, T Aoki, PM Wallace, J Kouvetakis, ... Journal of Applied Physics 118 (13), 2015 | 30 | 2015 |
| Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices RT Beeler, J Gallagher, C Xu, L Jiang, CL Senaratne, DJ Smith, ... ECS Journal of Solid State Science and Technology 2 (9), Q172, 2013 | 24 | 2013 |
| Non-conventional routes to SiGe: P/Si (100) materials and devices based on-SiH3 and-GeH3 derivatives of phosphorus: synthesis, electrical performance and optical behavior C Xu, JD Gallagher, P Sims, DJ Smith, J Menendez, J Kouvetakis Semiconductor Science and Technology 30 (4), 045007, 2015 | 19 | 2015 |
| Effectiveness of low power dual-Vt designs in nano-scale technologies under process parameter variations A Agarwal, K Kang, SK Bhunia, JD Gallagher, K Roy Proceedings of the 2005 international symposium on Low power electronics and …, 2005 | 18 | 2005 |
| Electroluminescence from Ge1− ySny diodes with degenerate pn junctions JD Gallagher, CL Senaratne, PM Wallace, J Menendez, J Kouvetakis Applied Physics Letters 107 (12), 2015 | 17 | 2015 |
| Optical properties of Ge-rich alloys: Compositional dependence of the lowest direct and indirect gaps C Xu, JD Gallagher, CL Senaratne, J Menendez, J Kouvetakis Physical Review B 93 (12), 125206, 2016 | 16 | 2016 |
| In situ low temperature As-doping of Ge films using As (SiH3) 3 and As (GeH3) 3: fundamental properties and device prototypes C Xu, JD Gallagher, PM Wallace, CL Senaratne, P Sims, J Menendez, ... Semiconductor Science and Technology 30 (10), 105028, 2015 | 16 | 2015 |
| Materials physics of GeSn-based semiconductor lasers J Menendez, PM Wallace, C Xu, CL Senaratne, JD Gallagher, ... Materials Today: Proceedings 14, 38-42, 2019 | 12 | 2019 |
| Toward GeSn lasers: Light amplification and stimulated emission in GeSn waveguides at room temperature J Mathews, Z Li, Y Zhao, J Gallagher, I Agha, J Menendez, J Kouvetakis ECS Transactions 75 (8), 163, 2016 | 10 | 2016 |
| Assessing thermal imagery integration into object detection methods on air-based collection platforms JE Gallagher, EJ Oughton Scientific Reports 13 (1), 8491, 2023 | 5 | 2023 |
José MenéndezProfessor of Physics, Arizona State UniversityVerified email at asu.edu
