| Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics M Higashiwaki, K Sasaki, T Kamimura, MH Wong, D Krishnamurthy, ... Applied Physics Letters 103 (12), 123511, 2013 | 758 | 2013 |
| Field-Plated Ga< sub> 2</sub> O< sub> 3</sub> MOSFETs With a Breakdown Voltage of Over 750 V MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki Electron Device Letters, IEEE 37 (2), 212-215, 2016 | 560* | 2016 |
| How to make ohmic contacts to organic semiconductors Y Shen, AR Hosseini, MH Wong, GG Malliaras ChemPhysChem 5 (1), 16-25, 2004 | 405 | 2004 |
| N-polar GaN∕ AlGaN∕ GaN high electron mobility transistors S Rajan, A Chini, MH Wong, JS Speck, UK Mishra Journal of Applied Physics 102 (4), 2007 | 289 | 2007 |
| N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, Nidhi, S Dasgupta, DJ Denninghoff, S Kolluri, ... Semiconductor Science and Technology 28 (7), 074009, 2013 | 252 | 2013 |
| Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions T Kamimura, K Sasaki, MH Wong, D Krishnamurthy, A Kuramata, T Masui, ... Applied Physics Letters 104 (19), 192104, 2014 | 234 | 2014 |
| Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain MH Wong, Y Nakata, A Kuramata, S Yamakoshi, M Higashiwaki Applied Physics Express 10 (4), 041101, 2017 | 201 | 2017 |
| Current status and scope of gallium nitride-based vertical transistors for high-power electronics application S Chowdhury, BL Swenson, MH Wong, UK Mishra Semiconductor Science and Technology 28 (7), 074014, 2013 | 193 | 2013 |
| CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion S Chowdhury, MH Wong, BL Swenson, UK Mishra Electron Device Letters, IEEE 33 (1), 41-43, 2012 | 192 | 2012 |
| Acceptor doping of β-Ga2O3 by Mg and N ion implantations MH Wong, CH Lin, A Kuramata, S Yamakoshi, H Murakami, Y Kumagai, ... Applied Physics Letters 113 (10), 2018 | 182 | 2018 |
| Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation CH Lin, Y Yuda, MH Wong, M Sato, N Takekawa, K Konishi, T Watahiki, ... IEEE Electron Device Letters 40 (9), 1487-1490, 2019 | 181 | 2019 |
| Current Aperture Vertical β-Ga2O3 MOSFETs Fabricated by N-and Si-Ion Implantation Doping MH Wong, K Goto, H Murakami, Y Kumagai, M Higashiwaki IEEE Electron Device Letters 40 (3), 431-434, 2019 | 180 | 2019 |
| Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki Japanese Journal of Applied Physics 55 (12), 1202B9, 2016 | 130 | 2016 |
| Vertical β-Ga₂O₃ Power Transistors: A Review MH Wong, M Higashiwaki IEEE Transactions on Electron Devices 67 (10), 3925-3937, 2020 | 124 | 2020 |
| Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki Applied Physics Letters 106 (3), 2015 | 110 | 2015 |
| Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki Applied Physics Letters 109 (19), 193503, 2016 | 109 | 2016 |
| Growth and electrical characterization of N-face AlGaN/GaN heterostructures S Rajan, M Wong, Y Fu, F Wu, JS Speck, UK Mishra Japanese journal of applied physics 44 (11L), L1478, 2005 | 108 | 2005 |
| Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation MH Wong, A Takeyama, T Makino, T Ohshima, K Sasaki, A Kuramata, ... Applied Physics Letters 112 (2), 023503, 2018 | 105 | 2018 |
| Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors M Ťapajna, SW Kaun, MH Wong, F Gao, T Palacios, UK Mishra, JS Speck, ... Applied Physics Letters 99 (22), 2011 | 105 | 2011 |
| Enhancement-Mode β-Ga2O3 Current Aperture Vertical MOSFETs with N-Ion-Implanted Blocker MH Wong, H Murakami, Y Kumagai, M Higashiwaki IEEE Electron Device Letters 41 (2), 296-299, 2020 | 103 | 2020 |
Masataka HigashiwakiOsaka Metropolitan University | National Institute of Information and Communications TechnologyVerified email at omu.ac.jp
