| SiC sensors: a review NG Wright, AB Horsfall Journal of Physics D: Applied Physics 40 (20), 6345, 2007 | 308 | 2007 |
| Prospects for SiC electronics and sensors NG Wright, AB Horsfall, K Vassilevski Materials today 11 (1-2), 16-21, 2008 | 243 | 2008 |
| Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide IP Nikitina, KV Vassilevski, NG Wright, AB Horsfall, AG O’Neill, ... Journal of Applied Physics 97 (8), 2005 | 200 | 2005 |
| Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing KV Vassilevski, NG Wright, IP Nikitina, AB Horsfall, AG O'neill, MJ Uren, ... Semiconductor Science and Technology 20 (3), 271, 2005 | 95 | 2005 |
| Calculated electron affinity and stability of halogen-terminated diamond AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall, R Jones, H Pinto, ... Physical Review B 84 (24), 245305, 2011 | 88 | 2011 |
| Leakage current and charge trapping behavior in TiO2∕ SiO2 high-κ gate dielectric stack on 4H‐SiC substrate R Mahapatra, AK Chakraborty, N Poolamai, A Horsfall, S Chattopadhyay, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 72 | 2007 |
| The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors B Miao, R Mahapatra, N Wright, A Horsfall Journal of Applied Physics 104 (5), 2008 | 57 | 2008 |
| Energy-band alignment of HfO2∕ SiO2∕ SiC gate dielectric stack R Mahapatra, AK Chakraborty, AB Horsfall, NG Wright, G Beamson, ... Applied physics letters 92 (4), 2008 | 50 | 2008 |
| Recent progress and current issues in SiC semiconductor devices for power applications CM Johnson, NG Wright, MJ Uren, KP Hilton, M Rahimo, DA Hinchley, ... IEE Proceedings-Circuits, Devices and Systems 148 (2), 101-108, 2001 | 50 | 2001 |
| Networks of DNA-templated palladium nanowires: structural and electrical characterisation and their use as hydrogen gas sensors MN Al-Hinai, R Hassanien, NG Wright, AB Horsfall, A Houlton, ... Faraday Discussions 164, 71-91, 2013 | 46 | 2013 |
| High temperature measurements of metal contacts on epitaxial graphene VK Nagareddy, IP Nikitina, DK Gaskill, JL Tedesco, RL Myers-Ward, ... Applied Physics Letters 99 (7), 2011 | 45 | 2011 |
| Design and performance evaluation of SiC based DC-DC converters for PV applications O Mostaghimi, N Wright, A Horsfall 2012 IEEE Energy Conversion Congress and Exposition (ECCE), 3956-3963, 2012 | 42 | 2012 |
| High voltage silicon carbide Schottky diodes with single zone junction termination extension K Vassilevski, IP Nikitina, AB Horsfall, NG Wright, AG O'Neill, KP Hilton, ... Materials Science Forum 556, 873-876, 2007 | 41 | 2007 |
| Direct measurement of residual stress in sub-micron interconnects AB Horsfall, JMM Dos Santos, SM Soare, NG Wright, AG O'neill, SJ Bull, ... semiconductor science and technology 18 (11), 992, 2003 | 41 | 2003 |
| Device processing and characterisation of high temperature silicon carbide Schottky diodes KV Vassilevski, IP Nikitina, NG Wright, AB Horsfall, AG O’Neill, ... Microelectronic engineering 83 (1), 150-154, 2006 | 40 | 2006 |
| Nanoindentation assessment of aluminium metallisation; the effect of creep and pile-up S Soare, SJ Bull, AG O'Neil, N Wright, A Horsfall, JMM dos Santos Surface and Coatings Technology 177, 497-503, 2004 | 39 | 2004 |
| Semi-transparent SiC Schottky diodes for X-ray spectroscopy JE Lees, DJ Bassford, GW Fraser, AB Horsfall, KV Vassilevski, NG Wright, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007 | 38 | 2007 |
| Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon E Escobedo-Cousin, K Vassilevski, T Hopf, N Wright, A O'Neill, A Horsfall, ... Journal of Applied Physics 113 (11), 2013 | 37 | 2013 |
| SiC X-ray detectors for harsh environments JE Lees, AM Barnett, DJ Bassford, RC Stevens, AB Horsfall Journal of Instrumentation 6 (01), C01032, 2011 | 35 | 2011 |
| Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC R Mahapatra, AK Chakraborty, AB Horsfall, S Chattopadhyay, NG Wright, ... Journal of Applied Physics 102 (2), 2007 | 35 | 2007 |
