| Porous nitride semiconductors reviewed PH Griffin, RA Oliver Journal of Physics D: Applied Physics 53 (38), 383002, 2020 | 58 | 2020 |
| Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching FCP Massabuau, PH Griffin, HP Springbett, Y Liu, RV Kumar, T Zhu, ... APL Materials 8 (3), 2020 | 28 | 2020 |
| Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN KTP Lim, C Deakin, B Ding, X Bai, P Griffin, T Zhu, RA Oliver, ... APL Materials 7 (2), 2019 | 27 | 2019 |
| Porous AlGaN-based ultraviolet distributed Bragg reflectors P Griffin, T Zhu, R Oliver Materials 11 (9), 1487, 2018 | 19 | 2018 |
| The relationship between the three-dimensional structure of porous GaN distributed Bragg reflectors and their birefringence PH Griffin, KM Patel, T Zhu, RM Langford, VS Kamboj, DA Ritchie, ... Journal of Applied Physics 127 (19), 2020 | 13 | 2020 |
| Enhanced piezoelectricity and electromechanical efficiency in semiconducting GaN due to nanoscale porosity Y Calahorra, B Spiridon, A Wineman, T Busolo, P Griffin, PK Szewczyk, ... Applied Materials Today 21, 100858, 2020 | 10 | 2020 |
| Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates JC Jarman, T Zhu, PH Griffin, RA Oliver Japanese Journal of Applied Physics 58 (SC), SCCC14, 2019 | 10 | 2019 |
| Sequential plan-view imaging of sub-surface structures in the transmission electron microscope FCP Massabuau, HP Springbett, G Divitini, PH Griffin, T Zhu, RA Oliver Materialia 12, 100798, 2020 | 4 | 2020 |
| Structural characterization of porous GaN distributed Bragg reflectors using x-ray diffraction PH Griffin, M Frentrup, T Zhu, ME Vickers, RA Oliver Journal of Applied Physics 126 (21), 2019 | 3 | 2019 |
| On-chip thermal insulation using porous GaN BF Spiridon, PH Griffin, JC Jarman, Y Liu, T Zhu, A De Luca, RA Oliver, ... Proceedings 2 (1), 776, 2018 | 3 | 2018 |
| Porosity in Nitride Semiconductors P Griffin | 1 | 2020 |
| Enhanced excitonic nature of MAPbBr3 nanocrystals in nanoporous GaN X Bai, S Fairclough, L Dai, P Griffin, I Dar, R Oliver, R Friend Wiley, 2024 | | 2024 |
| Method for electrochemically etching a semiconductor structure RA Oliver, ZHU Tongtong, Y Liu, P Griffin US Patent 11,631,782, 2023 | | 2023 |
| Method for electrochemically etching a semiconductor structure RA Oliver, ZHU Tongtong, Y Liu, P Griffin US Patent App. 18/060,342, 2023 | | 2023 |
| Research data supporting Enhanced piezoelectricity and electromechanical efficiency in semiconducting GaN due to nanoscale porosity Y Calahorra, BF Spiridon, A Wineman, T Busolo, P Griffin, P Szewczyk, ... | | 2022 |
| Porosity in Nitride Semiconductors: Supplementary Material P Griffin | | 2020 |
| Research Data Supporting: The relationship between the three-dimensional structure of porous GaN distributed Bragg reflectors and their birefringence P Griffin, K Patel, T Zhu, R Langford, V Kamboj, D Ritchie, R Oliver | | 2020 |
| Research data supporting" Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN" K Lim, C Deakin, B Ding, X Bai, P Griffin, T Zhu, R Oliver, D Credgington | | 2019 |
| Research data supporting" Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates" J Jarman, PH Griffin, T Zhu, R Oliver | | 2019 |
| Research data supporting: Porous AlGaN-based ultraviolet distributed Bragg reflectors. P Griffin, T Zhu, R Oliver | | 2018 |
Rachel OliverProfessor of Materials Science, Cambridge UniversityVerified email at cam.ac.uk
