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Dr. Ragh Charash K. S. (R.Charash)
Dr. Ragh Charash K. S. (R.Charash)
Unknown affiliation
Verified email at umail.ucc.ie
Title
Cited by
Cited by
Year
Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes
R Charash, PP Maaskant, L Lewis, C McAleese, MJ Kappers, ...
Applied Physics Letters 95 (15), 2009
582009
Growth optimization and characterization of lattice-matched Al0. 82In0. 18N optical confinement layer for edge emitting nitride laser diodes
H Kim-Chauveau, E Frayssinet, B Damilano, P De Mierry, L Bodiou, ...
Journal of crystal growth 338 (1), 20-29, 2012
152012
Cleaved-facet violet laser diodes with lattice-matched Al0. 82In0. 18N/GaN multilayers as n-cladding
R Charash, H Kim-Chauveau, JM Lamy, M Akther, PP Maaskant, ...
Applied Physics Letters 98 (20), 2011
102011
AlInN optical confinement layers for edge emitting group III‐nitride laser structures
HPD Schenk, M Nemoz, M Korytov, P Vennéguès, P Demolon, AD Dräger, ...
physica status solidi c 6 (S2 2), S897-S901, 2009
72009
Current transport through AlInN/GaN multilayers used as n‐type cladding layers in edge emitting laser diodes
R Charash, H Kim‐Chauveau, A Vajpeyi, M Akther, PP Maaskant, ...
physica status solidi c 8 (7‐8), 2378-2380, 2011
62011
Current transport through an n‐doped, nearly lattice matched GaN/AlInN/GaN heterostructure
B Corbett, R Charash, B Damilano, H Kim‐Chauveau, N Cordero, ...
physica status solidi c 9 (3‐4), 931-933, 2012
32012
Carrier distribution in InGaN
R CHARASH, PP MAASKANT, L LEWIS, C MCALEESE, MJ KAPPERS, ...
Applied physics letters 95 (15), 2009
2009
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