Fabiana Rampazzo
TitleCited byYear
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives
G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008
5222008
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ...
IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004
3112004
Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs
G Meneghesso, F Rampazzo, P Kordos, G Verzellesi, E Zanoni
IEEE Transactions on Electron Devices 53 (12), 2932-2941, 2006
1562006
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress
A Sozza, C Dua, E Morvan, S Delage, F Rampazzo, A Tazzoli, F Danesin, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005
902005
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging
G Meneghesso, S Levada, R Pierobon, F Rampazzo, E Zanoni, ...
Digest. International Electron Devices Meeting,, 103-106, 2002
552002
A review of failure modes and mechanisms of GaN-based HEMTs
E Zanoni, G Meneghesso, G Verzellesi, F Danesin, M Meneghini, ...
2007 IEEE International Electron Devices Meeting, 381-384, 2007
442007
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs
M Faqir, G Verzellesi, F Fantini, F Danesin, F Rampazzo, G Meneghesso, ...
Microelectronics reliability 47 (9-11), 1639-1642, 2007
352007
Reliability and failure analysis in power GaN-HEMTs: An overview
M Meneghini, I Rossetto, C De Santi, F Rampazzo, A Tajalli, A Barbato, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 3B-2.1-3B-2.8, 2017
292017
Influence of gate-leakage current on drain current collapse of unpassivated high electron mobility transistors
P Kordoš, J Bernát, M Marso, H Lüth, F Rampazzo, G Tamiazzo, ...
Applied Physics Letters 86 (25), 253511, 2005
292005
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT's
G Verzellesi, R Pierobon, F Rampazzo, G Meneghesso, A Chini, ...
Digest. International Electron Devices Meeting,, 689-692, 2002
282002
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC
G Meneghesso, R Pierobon, F Rampazzo, G Tamiazzo, E Zanoni, ...
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005
262005
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress
G Meneghesso, M Meneghini, A Stocco, D Bisi, C de Santi, I Rossetto, ...
Microelectronic Engineering 109, 257-261, 2013
232013
Developments on DC/DC converters for the LHC experiment upgrades
C Abbate, M Alderighi, S Baccaro, G Busatto, M Citterio, P Cova, ...
Journal of Instrumentation 9 (02), C02017, 2014
202014
Single-and double-heterostructure GaN-HEMTs devices for power switching applications
A Zanandrea, E Bahat-Treidel, F Rampazzo, A Stocco, M Meneghini, ...
Microelectronics Reliability 52 (9-10), 2426-2430, 2012
162012
Electrical and electroluminescence characteristics of AlGaN/GaN high electron mobility transistors operated in sustainable breakdown conditions
M Meneghini, A Zanandrea, F Rampazzo, A Stocco, M Bertin, G Cibin, ...
Japanese Journal of Applied Physics 52 (8S), 08JN17, 2013
152013
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
M Meneghini, I Rossetto, M Borga, E Canato, C De Santi, F Rampazzo, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 4B-5.1-4B-5.5, 2017
142017
High-voltage double-pulsed measurement system for GaN-based power HEMTs
D Bisi, A Stocco, M Meneghini, F Rampazzo, A Cester, G Meneghesso, ...
2014 IEEE International Reliability Physics Symposium, CD. 11.1-CD. 11.4, 2014
142014
Radiation performance of new semiconductor power devices for the LHC experiment upgrades
S Gerardin
11th International Conference on Large Scale Applications and Radiation …, 2015
132015
Proton induced trapping effect on space compatible GaN HEMTs
A Stocco, S Gerardin, D Bisi, S Dalcanale, F Rampazzo, M Meneghini, ...
Microelectronics Reliability 54 (9-10), 2213-2216, 2014
112014
GaN-HEMTs devices with single-and double-heterostructure for power switching applications
G Meneghesso, A Zanandrea, A Stocco, I Rossetto, C De Santi, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 3C. 1.1-3C. 1.7, 2013
112013
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