| Strong enhancement of nonlinear optical properties through supramolecular chirality T Verbiest, SV Elshocht, M Kauranen, L Hellemans, J Snauwaert, ... Science 282 (5390), 913-915, 1998 | 779 | 1998 |
| Effective electrical passivation of Ge (100) for high-k gate dielectric layers using germanium oxide A Delabie, F Bellenger, M Houssa, T Conard, S Van Elshocht, M Caymax, ... Applied physics letters 91 (8), 2007 | 345 | 2007 |
| High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ... Microelectronic engineering 86 (7-9), 1789-1795, 2009 | 297 | 2009 |
| Ferroelectricity in Gd-doped HfO2 thin films S Mueller, C Adelmann, A Singh, S Van Elshocht, U Schroeder, ... ECS Journal of Solid State Science and Technology 1 (6), N123, 2012 | 278 | 2012 |
| Synthesis, self-assembly, and nonlinear optical properties of conjugated helical metal phthalocyanine derivatives JM Fox, TJ Katz, S Van Elshocht, T Verbiest, M Kauranen, A Persoons, ... Journal of the American Chemical Society 121 (14), 3453-3459, 1999 | 236 | 1999 |
| Thickness dependence of the resistivity of platinum-group metal thin films S Dutta, K Sankaran, K Moors, G Pourtois, S Van Elshocht, J Bömmels, ... Journal of Applied Physics 122 (2), 2017 | 187 | 2017 |
| Circular dichroism and UV− Visible absorption spectra of the Langmuir− Blodgett films of an aggregating helicene C Nuckolls, TJ Katz, T Verbiest, SV Elshocht, HG Kuball, S Kiesewalter, ... Journal of the American Chemical Society 120 (34), 8656-8660, 1998 | 151 | 1998 |
| Deposition of HfO2 on germanium and the impact of surface pretreatments S Van Elshocht, B Brijs, M Caymax, T Conard, T Chiarella, S De Gendt, ... Applied physics letters 85 (17), 3824-3826, 2004 | 137 | 2004 |
| Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories T Schenk, S Mueller, U Schroeder, R Materlik, A Kersch, M Popovici, ... 2013 Proceedings of the European Solid-State Device Research Conference …, 2013 | 123 | 2013 |
| Atomic layer deposition of ruthenium with TiN interface for sub-10 nm advanced interconnects beyond copper LG Wen, P Roussel, OV Pedreira, B Briggs, B Groven, S Dutta, ... ACS applied materials & interfaces 8 (39), 26119-26125, 2016 | 106 | 2016 |
| Dielectric properties of dysprosium-and scandium-doped hafnium dioxide thin films C Adelmann, V Sriramkumar, S Van Elshocht, P Lehnen, T Conard, ... Applied Physics Letters 91 (16), 2007 | 104 | 2007 |
| Comparison of linearly and circularly polarized probes of second‐order optical activity of chiral surfaces JJ Maki, T Verbiest, M Kauranen, SV Elshocht, A Persoons The Journal of chemical physics 105 (2), 767-772, 1996 | 100 | 1996 |
| Low temperature deposition of 2D WS 2 layers from WF 6 and H 2 S precursors: impact of reducing agents A Delabie, M Caymax, B Groven, M Heyne, K Haesevoets, J Meersschaut, ... Chemical Communications 51 (86), 15692-15695, 2015 | 99 | 2015 |
| Quantitative determination of electric and magnetic second-order susceptibility tensors of chiral surfaces M Kauranen, JJ Maki, T Verbiest, S Van Elshocht, A Persoons Physical Review B 55 (4), R1985, 1997 | 96 | 1997 |
| Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S B Groven, M Heyne, A Nalin Mehta, H Bender, T Nuytten, J Meersschaut, ... Chemistry of Materials 29 (7), 2927-2938, 2017 | 93 | 2017 |
| Estimation of fixed charge densities in hafnium-silicate gate dielectrics VS Kaushik, BJ O'Sullivan, G Pourtois, N Van Hoornick, A Delabie, ... IEEE Transactions on Electron Devices 53 (10), 2627-2633, 2006 | 90 | 2006 |
| HfO2 as gate dielectric on Ge: Interfaces and deposition techniques M Caymax, S Van Elshocht, M Houssa, A Delabie, T Conard, M Meuris, ... Materials Science and Engineering: B 135 (3), 256-260, 2006 | 89 | 2006 |
| Alternative metals for advanced interconnects C Adelmann, LG Wen, AP Peter, YK Siew, K Croes, J Swerts, M Popovici, ... IEEE International Interconnect Technology Conference, 173-176, 2014 | 88 | 2014 |
| Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices S Van Elshocht, M Caymax, T Conard, S De Gendt, I Hoflijk, M Houssa, ... Applied physics letters 88 (14), 2006 | 88 | 2006 |
| Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control AP Peter, K Martens, G Rampelberg, M Toeller, JM Ablett, J Meersschaut, ... Advanced Functional Materials 25 (5), 679-686, 2015 | 86 | 2015 |
