Anindya Nath
Anindya Nath
Globalfoundries, US Naval Research Lab
Verified email at
TitleCited byYear
Vertical GaN junction barrier Schottky rectifiers by selective ion implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
Microwave annealing of very high dose aluminum-implanted 4H-SiC
R Nipoti, A Nath, MV Rao, A Hallén, A Carnera, YL Tian
Applied Physics Express 4 (11), 111301, 2011
Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process
A Nath, AD Koehler, GG Jernigan, VD Wheeler, JK Hite, SC Hernández, ...
Applied Physics Letters 104 (22), 224102, 2014
Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC
A Parisini, M Gorni, A Nath, L Belsito, MV Rao, R Nipoti
Journal of Applied Physics 118 (3), 035101, 2015
Plasma-based chemical modification of epitaxial graphene with oxygen functionalities
SC Hernandez, VD Wheeler, MS Osofsky, GG Jernigan, VK Nagareddy, ...
Surface and Coatings Technology 241, 8-12, 2014
Functionalized graphene as a model system for the two-dimensional metal-insulator transition
MS Osofsky, SC Hernández, A Nath, VD Wheeler, SG Walton, CM Krowne, ...
Scientific reports 6, 19939, 2016
High-dose phosphorus-implanted 4H-SiC: Microwave and conventional post-implantation annealing at temperatures≥ 1700° C
R Nipoti, A Nath, SB Qadri, YL Tian, C Albonetti, A Carnera, MV Rao
Journal of electronic materials 41 (3), 457-465, 2012
Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes
A Nath, MV Rao, F Moscatelli, M Puzzanghera, F Mancarella, R Nipoti
2014 20th International Conference on Ion Implantation Technology (IIT), 1-4, 2014
Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN
CR English, VD Wheeler, NY Garces, N Nepal, A Nath, JK Hite, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
Vertical GaN junction barrier Schottky diodes
AD Koehler, TJ Anderson, MJ Tadjer, A Nath, BN Feigelson, DI Shahin, ...
ECS Journal of Solid State Science and Technology 6 (1), Q10-Q12, 2017
Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene
KM Daniels, MM Jadidi, AB Sushkov, A Nath, AK Boyd, K Sridhara, ...
2D Materials 4 (2), 025034, 2017
Challenges to graphene growth on SiC (0 0 0 1‾): Substrate effects, hydrogen etching and growth ambient
ZR Robinson, GG Jernigan, M Currie, JK Hite, KM Bussmann, LO Nyakiti, ...
Carbon 81, 73-82, 2015
Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
VR Anderson, N Nepal, SD Johnson, ZR Robinson, A Nath, AC Kozen, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 (3 …, 2017
Electrochemically prepared polycrystalline copper surface for the growth of hexagonal boron nitride
K Sridhara, BN Feigelson, JA Wollmershauser, JK Hite, A Nath, ...
Crystal Growth & Design 17 (4), 1669-1678, 2017
Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication
A Nath, MV Rao, YL Tian, A Parisini, R Nipoti
Journal of electronic materials 43 (4), 843-849, 2014
Ultra-broadband photodetectors based on epitaxial graphene quantum dots
A El Fatimy, A Nath, BD Kong, AK Boyd, RL Myers-Ward, KM Daniels, ...
Nanophotonics 7 (4), 735-740, 2018
Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates
TJ Anderson, AD Koehler, MJ Tadjer, JK Hite, A Nath, NA Mahadik, ...
Applied Physics Express 10 (12), 126501, 2017
Determining the nature of the gap in semiconducting graphene
JC Prestigiacomo, A Nath, MS Osofsky, SC Hernández, VD Wheeler, ...
Scientific reports 7, 41713, 2017
Effect of Surface Passivation and Substrate on Proton Irradiated AlGaN/GaN HEMT Transport Properties
JC Gallagher, TJ Anderson, AD Koehler, NA Mahadik, A Nath, BD Weaver, ...
ECS Journal of Solid State Science and Technology 6 (11), S3060-S3062, 2017
In search of quantum-limited contact resistance: understanding the intrinsic and extrinsic effects on the graphene–metal interface
A Nath, M Currie, AK Boyd, VD Wheeler, AD Koehler, MJ Tadjer, ...
2D Materials 3 (2), 025013, 2016
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