| Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi2Se3/yttrium iron garnet heterostructures YT Fanchiang, KHM Chen, CC Tseng, CC Chen, CK Cheng, SR Yang, ... Nature communications 9 (1), 223, 2018 | 90 | 2018 |
| High-quality thulium iron garnet films with tunable perpendicular magnetic anisotropy by off-axis sputtering – correlation between magnetic properties and film strain CN Wu, CC Tseng, YT Fanchiang, CK Cheng, KY Lin, SL Yeh, SR Yang, ... Scientific reports 8 (1), 11087, 2018 | 78 | 2018 |
| High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering CN Wu, CC Tseng, KY Lin, CK Cheng, SL Yeh, YT Fanchiang, M Hong, ... AIP Advances 8 (5), 2018 | 38 | 2018 |
| Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2 KHM Chen, HY Lin, SR Yang, CK Cheng, XQ Zhang, CM Cheng, SF Lee, ... Applied Physics Letters 111 (8), 2017 | 29 | 2017 |
| Single-crystal atomic layer deposited Y2O3 on GaAs (0 0 1)–growth, structural, and electrical characterization SY Wu, KH Chen, YH Lin, CK Cheng, CH Hsu, J Kwo, M Hong Microelectronic Engineering 147, 310-313, 2015 | 22 | 2015 |
| Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces CC Chen, KHM Chen, YT Fanchiang, CC Tseng, SR Yang, CN Wu, ... Applied Physics Letters 114 (3), 2019 | 20 | 2019 |
| Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition YH Lin, CK Cheng, KH Chen, CH Fu, TW Chang, CH Hsu, J Kwo, M Hong Materials 8 (10), 7084-7093, 2015 | 20 | 2015 |
| Thickness-dependent topological phase transition and Rashba-like preformed topological surface states of α-Sn (001) thin films on InSb (001) KHM Chen, KY Lin, SW Lien, SW Huang, CK Cheng, HY Lin, CH Hsu, ... Physical Review B 105 (7), 075109, 2022 | 14 | 2022 |
| Single-crystal epitaxial europium iron garnet films with strain-induced perpendicular magnetic anisotropy: Structural, strain, magnetic, and spin transport properties MX Guo, CK Cheng, YC Liu, CN Wu, WN Chen, TY Chen, CT Wu, CH Hsu, ... Physical Review Materials 6 (5), 054412, 2022 | 13 | 2022 |
| Low-temperature grown single-crystal Si on epi Ge (001)-2× 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission YT Cheng, HW Wan, CK Cheng, CP Cheng, JR Kwo, M Hong, TW Pi Applied Physics Express 13 (8), 085504, 2020 | 9 | 2020 |
| GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3–In comparison with atomic layer deposited Al2O3 HW Wan, KY Lin, CK Cheng, YK Su, WC Lee, CH Hsu, TW Pi, J Kwo, ... Journal of Crystal Growth 477, 179-182, 2017 | 9 | 2017 |
| Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS HW Wan, YJ Hong, YT Cheng, CK Cheng, CH Hsu, CT Wu, TW Pi, J Kwo, ... ACS Applied Electronic Materials 3 (5), 2164-2169, 2021 | 8 | 2021 |
| A new stable, crystalline capping material for topological insulators HY Lin, CK Cheng, KHM Chen, CC Tseng, SW Huang, MT Chang, ... APL Materials 6 (6), 2018 | 7 | 2018 |
| Surface electronic structure of Si1− xGex (001)-2× 1: A synchrotron radiation photoemission study YT Cheng, HW Wan, CK Cheng, CP Cheng, J Kwo, M Hong, TW Pi Applied Physics Express 13 (9), 095503, 2020 | 6 | 2020 |
| Epitaxial ferromagnetic Fe3Si on GaAs (111) A with atomically smooth surface and interface YC Liu, YW Chen, SC Tseng, MT Chang, SC Lo, YH Lin, CK Cheng, ... Applied Physics Letters 107 (12), 2015 | 6 | 2015 |
| In-situ deposited HfO2 and Y2O3 on epi-Si/p-Ge—A comparative study of the interfacial properties and reliability TY Chu, HW Wan, YT Cheng, CK Cheng, YJ Hong, J Kwo, M Hong Japanese Journal of Applied Physics 61 (SC), SC1074, 2022 | 4 | 2022 |
| Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition LB Young, CK Cheng, KY Lin, YH Lin, HW Wan, RF Cai, SC Lo, MY Li, ... Crystal Growth & Design 19 (4), 2030-2036, 2019 | 4 | 2019 |
| Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs (001) KY Lin, LB Young, CK Cheng, KH Chen, YH Lin, HW Wan, RF Cai, SC Lo, ... Microelectronic engineering 178, 271-274, 2017 | 4 | 2017 |
| Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs (111) A and (001) using atomic layer deposition CK Cheng, LB Young, KY Lin, YH Lin, HW Wan, GJ Lu, MT Chang, ... Microelectronic Engineering 178, 125-127, 2017 | 3 | 2017 |
| Demonstration of large field effect in topological insulator films via a high-κ back gate CY Wang, HY Lin, SR Yang, KHM Chen, YH Lin, KH Chen, LB Young, ... Applied Physics Letters 108 (20), 2016 | 3 | 2016 |
M. HongNatl Taiwan Univ. Bell LaboratoriesVerified email at phys.ntu.edu.tw
