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Atefeh Rahimifar
Atefeh Rahimifar
Unknown affiliation
Verified email at karoon.ac.ir - Homepage
Title
Cited by
Cited by
Year
Predicting the energy consumption in software defined wireless sensor networks: a probabilistic Markov model approach
A Rahimifar, Y Seifi Kavian, H Kaabi, M Soroosh
Journal of Ambient Intelligence and Humanized Computing 12 (10), 9053-9066, 2021
242021
A novel double-gate SOI MOSFET to improve the floating body effect by dual SiGe trench
AA Orouji, A Rahimifar, M Jozi
Journal of Computational Electronics 15, 537-544, 2016
82016
An efficient Markov energy predictor for software defined wireless sensor networks
A Rahimifar, Y Seifi Kavian, H Kaabi, M Soroosh
Wireless Networks 28 (8), 3391-3409, 2022
22022
A NOVEL SOI MESFET BY USING AN ADDITIONAL OXIDE REGION IN CHANNEL FOR HIGH POWER AND HIGH FREQUENCY APPLICATIONS
AA OROUJI, Z RAMEZANI, A RAHIMIFAR
TABRIZ JOURNAL OF ELECTRICAL ENGINEERING 46 (478), 0-0, 2017
12017
A Smart Duty Cycle for Lifetime Enhancement and Control Overhead in SDWSN
A Rahimifar, YS Kavian, H Kaabi, M Soroosh
Iranian Journal of Science and Technology, Transactions of Electrical …, 2023
2023
7 Scope and challenges
A Rahimifar, Z Ramezani
Device Circuit Co-Design Issues in FETs, 161, 2023
2023
Scope and challenges with nanosheet FET-based circuit design
A Rahimifar, Z Ramezani
Device Circuit Co-Design Issues in FETs, 161-180, 2023
2023
Investigation of Routing Process in Software-Defined Wireless Sensor Networks
H Pirvand Boori, A Rahimifar
2nd International Conference on Electrical Engineering, Computer Science and …, 2018
2018
Challenges and Requirements of the Optimal Design in Software-Defined Wireless Sensor Networks
Z Shehni Feyz, A Rahimifar
The Second National Conference on Science and Technology of Electrical …, 2018
2018
Intelligent control using Internet of Things (IoT) technology
H Hazba, A Rahimifar
2nd National Conference on Electrical and Computer Engineering, 2017
2017
Step Dual Gate Silicon on Insulator Transistor (SDG SOI): A New Structure to Reduce Short Channel Effects
A Rahimifar, AA Orouji, M Jozi
23rd Iranian Electrical Engineering Conference (IEEC), 2015
2015
A New MOSFET Structure Design to Increase the Breakdown Voltage and Reduce resistivity
M Jozi Najafabadi, AA Orouji, A Rahimifar
Physics Conference of Iran, 2014
2014
Investigation of failure mechanisms in sharp corners PN junctions in silicon carbide MOSFETs and presenting a new structure to increase the breakdown voltage
M Jozi Najafabadi, AA Orouji, A Rahimifar
Physics Conference of Iran, 2014
2014
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Articles 1–13