Theo dõi
Gilles Horowitz
Gilles Horowitz
Directeur de recherche émérite, Centre National de la Recherche Scientifique
Email được xác minh tại polytechnique.edu
Tiêu đề
Trích dẫn bởi
Trích dẫn bởi
Năm
Organic field‐effect transistors
G Horowitz
Advanced materials 10 (5), 365-377, 1998
35551998
Organic thin film transistors: From theory to real devices
G Horowitz
Journal of materials research 19 (7), 1946-1962, 2004
10922004
Molecular engineering of organic semiconductors: design of self-assembly properties in conjugated thiophene oligomers
F Garnier, A Yassar, R Hajlaoui, G Horowitz, F Deloffre, B Servet, S Ries, ...
Journal of the American Chemical Society 115 (19), 8716-8721, 1993
9741993
High‐performance organic field‐effect transistors
D Braga, G Horowitz
Advanced materials 21 (14‐15), 1473-1486, 2009
8262009
A field-effect transistor based on conjugated alpha-sexithienyl
G Horowitz, D Fichou, X Peng, Z Xu, F Garnier
Solid State Communications 72 (4), 381-384, 1989
7411989
Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors
G Horowitz, ME Hajlaoui, R Hajlaoui
Journal of Applied Physics 87 (9), 4456-4463, 2000
7312000
An all‐organic" soft" thin film transistor with very high carrier mobility
F Garnier, G Horowitz, X Peng, D Fichou
Advanced Materials 2 (12), 592-594, 1990
7111990
Growth and characterization of sexithiophene single crystals
G Horowitz, B Bachet, A Yassar, P Lang, F Demanze, JL Fave, F Garnier
Chemistry of materials 7 (7), 1337-1341, 1995
6721995
Mobility in polycrystalline oligothiophene field‐effect transistors dependent on grain size
G Horowitz, ME Hajlaoui
Advanced Materials 12 (14), 1046-1050, 2000
5002000
The concept of “threshold voltage” in organic field‐effect transistors
G Horowitz, R Hajlaoui, H Bouchriha, R Bourguiga, M Hajlaoui
Advanced Materials 10 (12), 923-927, 1998
4111998
Gate voltage dependent mobility of oligothiophene field-effect transistors
G Horowitz, R Hajlaoui, D Fichou, A El Kassmi
Journal of Applied Physics 85 (6), 3202-3206, 1999
3931999
Evidence for n‐type conduction in a perylene tetracarboxylic diimide derivative
G Horowitz, F Kouki, P Spearman, D Fichou, C Nogues, X Pan, F Garnier
Advanced Materials 8 (3), 242-245, 1996
3851996
Stoichiometric control of the successive generation of the radical cation and dication of extended α-conjugated oligothiophenes: a quantitative model for doped polythiophene
D Fichou, G Horowitz, B Xu, F Garnier
Synthetic metals 39 (2), 243-259, 1990
3781990
Temperature dependence of the field-effect mobility of sexithiophene. Determination of the density of traps
G Horowitz, R Hajlaoui, P Delannoy
Journal de Physique III 5 (4), 355-371, 1995
3751995
An analytical model for organic‐based thin‐film transistors
G Horowitz, P Delannoy
Journal of Applied Physics 70 (1), 469-475, 1991
3641991
Polymorphism and charge transport in vacuum-evaporated sexithiophene films
B Servet, G Horowitz, S Ries, O Lagorsse, P Alnot, A Yassar, F Deloffre, ...
Chemistry of materials 6 (10), 1809-1815, 1994
3601994
Advances in organic transistor-based biosensors: from organic electrochemical transistors to electrolyte-gated organic field-effect transistors
L Kergoat, B Piro, M Berggren, G Horowitz, MC Pham
Analytical and bioanalytical chemistry 402, 1813-1826, 2012
3562012
A water‐gate organic field‐effect transistor
L Kergoat, L Herlogsson, D Braga, B Piro, MC Pham, X Crispin, ...
Advanced Materials 22 (23), 2565-2569, 2010
3372010
The oligothiophene‐based field‐effect transistor: How it works and how to improve it
G Horowitz, X Peng, D Fichou, F Garnier
Journal of Applied Physics 67 (1), 528-532, 1990
3261990
Field‐effect transistor made with a sexithiophene single crystal
G Horowitz, F Garnier, A Yassar, R Hajlaoui, F Kouki
Advanced Materials 8 (1), 52-54, 1996
3001996
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