| Raman Enhancement Effect on Two-Dimensional Layered Materials: Graphene, h-BN and MoS2 X Ling, W Fang, YH Lee, PT Araujo, X Zhang, JF Rodriguez-Nieva, Y Lin, ... Nano letters 14 (6), 3033-3040, 2014 | 529 | 2014 |
| Role of interfacial oxide in high-efficiency graphene–silicon Schottky barrier solar cells Y Song, X Li, C Mackin, X Zhang, W Fang, T Palacios, H Zhu, J Kong Nano letters 15 (3), 2104-2110, 2015 | 472 | 2015 |
| Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting Xu Zhang, Jesús Grajal, Jose Luis Vazquez-Roy, Ujwal Radhakrishna, Xiaoxue ... Nature, 2019 | 314 | 2019 |
| Parallel stitching of two-dimensional materials X Ling, Y Lin, Q Ma, Z Wang, Y Song, L Yu, S Huang, W Fang, X Zhang, ... arXiv preprint arXiv:1512.04492, 2015 | 255 | 2015 |
| High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits L Yu, A Zubair, EJG Santos, X Zhang, Y Lin, Y Zhang, T Palacios Nano letters 15 (8), 4928-4934, 2015 | 248 | 2015 |
| High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment X Wang, X Zhang, L Sun, D Lee, S Lee, M Wang, J Zhao, Y Shao-Horn, ... Science Advances 4 (9), 2018 | 220 | 2018 |
| GaN-on-Si vertical Schottky and pn diodes Y Zhang, M Sun, D Piedra, M Azize, X Zhang, T Fujishima, T Palacios IEEE electron device letters 35 (6), 618-620, 2014 | 195 | 2014 |
| Vertical GaN junction barrier Schottky rectifiers by selective ion implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 162 | 2017 |
| Synthesis of High‐Quality Large‐Area Homogenous 1T′ MoTe2 from Chemical Vapor Deposition L Zhou, A Zubair, Z Wang, X Zhang, F Ouyang, K Xu, W Fang, K Ueno, ... Advanced materials 28 (43), 9526-9531, 2016 | 153 | 2016 |
| Impact of chlorine functionalization on high-mobility chemical vapor deposition grown graphene X Zhang, A Hsu, H Wang, Y Song, J Kong, MS Dresselhaus, T Palacios ACS nano 7 (8), 7262-7270, 2013 | 131 | 2013 |
| Role of Molecular Sieves in the CVD Synthesis of Large‐Area 2D MoTe2 L Zhou, K Xu, A Zubair, X Zhang, F Ouyang, T Palacios, MS Dresselhaus, ... Advanced Functional Materials 27 (3), 1603491, 2017 | 78 | 2017 |
| Active matrix monolithic LED micro-display using GaN-on-Si epilayers X Zhang, P Li, X Zou, J Jiang, SH Yuen, CW Tang, KM Lau IEEE Photonics Technology Letters 31 (11), 865-868, 2019 | 73 | 2019 |
| Large-area 2-D electronics: materials, technology, and devices A Hsu, H Wang, YC Shin, B Mailly, X Zhang, L Yu, Y Shi, YH Lee, ... Proceedings of the IEEE 101 (7), 1638-1652, 2013 | 61 | 2013 |
| X‐Ray Spectroscopic Investigation of Chlorinated Graphene: Surface Structure and Electronic Effects X Zhang, T Schiros, D Nordlund, YC Shin, J Kong, M Dresselhaus, ... Advanced Functional Materials 25 (26), 4163-4169, 2015 | 58 | 2015 |
| Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions TP Yuxuan Lin, Qiong Ma, Pin-Chun Shen, Batyr Ilyas, Yaqing Bie, Albert Liao ... Science Advances 5 (6), eaav1493, 2019 | 50 | 2019 |
| Characterization of bundled and individual triple-walled carbon nanotubes by resonant Raman spectroscopy TC Hirschmann, PT Araujo, H Muramatsu, X Zhang, K Nielsch, YA Kim, ... ACS nano 7 (3), 2381-2387, 2013 | 45 | 2013 |
| Cartilage-inspired superelastic ultradurable graphene aerogels prepared by the selective gluing of intersheet joints JY Hong, S Yun, JJ Wie, X Zhang, MS Dresselhaus, J Kong, HS Park Nanoscale 8 (26), 12900-12909, 2016 | 39 | 2016 |
| Kirigami engineering—nanoscale structures exhibiting a range of controllable 3D configurations X Zhang, L Medina, H Cai, V Aksyuk, HD Espinosa, D Lopez Advanced Materials 33 (5), 2005275, 2021 | 30 | 2021 |
| Opportunities and challenges of ambient radio-frequency energy harvesting X Zhang, J Grajal, M Lopez-Vallejo, E McVay, T Palacios Joule 4 (6), 1148-1152, 2020 | 26 | 2020 |
| Circuit‐level memory technologies and applications based on 2D materials J Ma, H Liu, N Yang, J Zou, S Lin, Y Zhang, X Zhang, J Guo, H Wang Advanced Materials 34 (48), 2202371, 2022 | 22 | 2022 |
Tomás PalaciosMITVerified email at mit.edu
