Xu Cui
Xu Cui
Graduate Student, Mechanical Engineering, Columbia University
Verified email at columbia.edu
Title
Cited by
Cited by
Year
Atomically thin p–n junctions with van der Waals heterointerfaces
CH Lee, GH Lee, AM Van Der Zande, W Chen, Y Li, M Han, X Cui, ...
Nature nanotechnology 9 (9), 676, 2014
14662014
Solution-Processed Graphene/MnO2 Nanostructured Textiles for High-Performance Electrochemical Capacitors
G Yu, L Hu, M Vosgueritchian, H Wang, X Xie, JR McDonough, X Cui, ...
Nano letters 11 (7), 2905-2911, 2011
11662011
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
GH Lee, YJ Yu, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ...
ACS nano 7 (9), 7931-7936, 2013
8362013
Multi-terminal transport measurements of MoS 2 using a van der Waals heterostructure device platform
X Cui, GH Lee, YD Kim, G Arefe, PY Huang, CH Lee, DA Chenet, X Zhang, ...
Nature nanotechnology 10 (6), 534-540, 2015
8352015
Valley Splitting and Polarization by the Zeeman Effect in Monolayer
Y Li, J Ludwig, T Low, A Chernikov, X Cui, G Arefe, YD Kim, ...
Physical review letters 113 (26), 266804, 2014
3162014
Liquid-phase exfoliation, functionalization and applications of graphene
X Cui, C Zhang, R Hao, Y Hou
Nanoscale 3 (5), 2118-2126, 2011
2482011
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
GH Lee, X Cui, YD Kim, G Arefe, X Zhang, CH Lee, F Ye, K Watanabe, ...
ACS nano 9 (7), 7019-7026, 2015
2272015
Measurement of Lateral and Interfacial Thermal Conductivity of Single- and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique
X Zhang, D Sun, Y Li, GH Lee, X Cui, D Chenet, Y You, TF Heinz, ...
ACS applied materials & interfaces 7 (46), 25923-25929, 2015
1712015
Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes
X Cui, EM Shih, LA Jauregui, SH Chae, YD Kim, B Li, D Seo, K Pistunova, ...
Nano letters 17 (8), 4781-4786, 2017
1282017
Facile preparation of nitrogen-doped few-layer graphene via supercritical reaction
W Qian, X Cui, R Hao, Y Hou, Z Zhang
ACS Applied Materials & Interfaces 3 (7), 2259-2264, 2011
782011
Thickness-dependent Schottky barrier height of MoS2 field-effect transistors
J Kwon, JY Lee, YJ Yu, CH Lee, X Cui, J Hone, GH Lee
Nanoscale 9 (18), 6151-6157, 2017
692017
Heterostructures based on inorganic and organic van der Waals systems
GH Lee, CH Lee, AM Van Der Zande, M Han, X Cui, G Arefe, C Nuckolls, ...
Apl Materials 2 (9), 092511, 2014
582014
Engineering MoS2 contact by inserting an ultrathin tunnelling barrier
EM Shih, X Cui, D Seo, Y Jung, R Ribeiro, J Hone, C Dean
APS 2017, B32. 008, 2017
2017
Valley selective high field magneto-spectroscopy of monolayer MoSe2
J Ludwig, Y Li, Z Lu, XX Zhang, X Cui, J Hone, TF Heinz, D Smirnov
APS 2016, X17. 003, 2016
2016
High-k Dielectric Nanosheets for Two-Dimensional material Electronics
Y Hao, X Cui, J Yin, GH Lee, G Arefe, M Osada, T Sasaki, J Hone
APS 2015, W16. 013, 2015
2015
Charge transport and optoelectronic process in an atomically thin pn junction
CH Lee, GH Lee, A van der Zande, W Chen, Y Li, M Han, X Cui, G Araffe, ...
APS 2014, Q37. 007, 2014
2014
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Articles 1–16