| Ultra-low power Hf 0.5 Zr 0.5 O 2 based ferroelectric tunnel junction synapses for hardware neural network applications L Chen, TY Wang, YW Dai, MY Cha, H Zhu, QQ Sun, SJ Ding, P Zhou, ... Nanoscale 10 (33), 15826-15833, 2018 | 181 | 2018 |
| Three-dimensional nanoscale flexible memristor networks with ultralow power for information transmission and processing application TY Wang, JL Meng, MY Rao, ZY He, L Chen, H Zhu, QQ Sun, SJ Ding, ... Nano letters 20 (6), 4111-4120, 2020 | 139 | 2020 |
| Influence of Metal–MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts H Yuan, G Cheng, L You, H Li, H Zhu, W Li, JJ Kopanski, YS Obeng, ... ACS applied materials & interfaces 7 (2), 1180-1187, 2015 | 122 | 2015 |
| Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors H Zhu, CA Richter, E Zhao, JE Bonevich, WA Kimes, HJ Jang, H Yuan, ... Scientific reports 3 (1), 1757, 2013 | 119 | 2013 |
| Integrated in-sensor computing optoelectronic device for environment-adaptable artificial retina perception application J Meng, T Wang, H Zhu, L Ji, W Bao, P Zhou, L Chen, QQ Sun, DW Zhang Nano Letters 22 (1), 81-89, 2021 | 116 | 2021 |
| Ultralow power wearable heterosynapse with photoelectric synergistic modulation TY Wang, JL Meng, ZY He, L Chen, H Zhu, QQ Sun, SJ Ding, P Zhou, ... Advanced Science 7 (8), 1903480, 2020 | 110 | 2020 |
| Reconfigurable optoelectronic memristor for in-sensor computing applications TY Wang, JL Meng, QX Li, ZY He, H Zhu, L Ji, QQ Sun, L Chen, ... Nano Energy 89, 106291, 2021 | 81 | 2021 |
| A two-dimensional semiconductor transistor with boosted gate control and sensing ability J Xu, L Chen, YW Dai, Q Cao, QQ Sun, SJ Ding, H Zhu, DW Zhang Science advances 3 (5), e1602246, 2017 | 80 | 2017 |
| Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications JL Meng, TY Wang, ZY He, L Chen, H Zhu, L Ji, QQ Sun, SJ Ding, WZ Bao, ... Materials Horizons 8 (2), 538-546, 2021 | 78 | 2021 |
| Strain-engineering the anisotropic electrical conductance in ReS2 monolayer S Yu, H Zhu, K Eshun, C Shi, M Zeng, Q Li Applied Physics Letters 108 (19), 2016 | 77 | 2016 |
| A Dual‐Gate MoS2 Photodetector Based on Interface Coupling Effect F Liao, J Deng, X Chen, Y Wang, X Zhang, J Liu, H Zhu, L Chen, Q Sun, ... Small 16 (1), 1904369, 2020 | 75 | 2020 |
| Flexible Electronic Synapses for Face Recognition Application with Multi-modulated Conductance States TY Wang, ZY He, H Liu, L Chen, H Zhu, QQ Sun, SJ Ding, P Zhou, ... ACS Applied Materials & Interfaces 10 (43), 37345–37352, 2018 | 72 | 2018 |
| Reconfigurable neuromorphic memristor network for ultralow-power smart textile electronics T Wang, J Meng, X Zhou, Y Liu, Z He, Q Han, Q Li, J Yu, Z Li, Y Liu, H Zhu, ... Nature Communications 13 (1), 7432, 2022 | 68 | 2022 |
| Redox-active molecular nanowire flash memory for high-endurance and high-density nonvolatile memory applications H Zhu, SJ Pookpanratana, JE Bonevich, SN Natoli, CA Hacker, T Ren, ... ACS Applied Materials & Interfaces 7 (49), 27306-27313, 2015 | 65 | 2015 |
| Flexible 3D memristor array for binary storage and multi‐states neuromorphic computing applications TY Wang, JL Meng, L Chen, H Zhu, QQ Sun, SJ Ding, WZ Bao, DW Zhang InfoMat 3 (2), 212-221, 2021 | 61 | 2021 |
| Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment X Wang, TB Zhang, W Yang, H Zhu, L Chen, QQ Sun, DW Zhang Applied Physics Letters 110 (5), 2017 | 61 | 2017 |
| An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations Y Wang, H Tang, Y Xie, X Chen, S Ma, Z Sun, Q Sun, L Chen, H Zhu, ... Nature communications 12 (1), 3347, 2021 | 58 | 2021 |
| Synthesis of large-scale few-layer PtS2 films by chemical vapor deposition D Zhao, S Xie, Y Wang, H Zhu, L Chen, Q Sun, DW Zhang AIP Advances 9 (2), 2019 | 58 | 2019 |
| A computational study of the electronic properties of one-dimensional armchair phosphorene nanotubes S Yu, H Zhu, K Eshun, A Arab, A Badwan, Q Li Journal of Applied Physics 118 (16), 2015 | 54 | 2015 |
| Gas sensing devices based on two-dimensional materials: a review B Wang, Y Gu, L Chen, L Ji, H Zhu, Q Sun Nanotechnology 33 (25), 252001, 2022 | 51 | 2022 |
