| Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding interface-engineered vertical stacking and surface passivation SHK D-M Geum, SK Kim, C-M Kang, S-H Moon, J Kyhm, JH Han, D-S Lee Nanoscale 48 (11), 23139-23148, 2019 | 51* | 2019 |
| Bioinspired photoresponsive single transistor neuron for a neuromorphic visual system JK Han, DM Geum, MW Lee, JM Yu, SK Kim, S Kim, YK Choi Nano Letters 20 (12), 8781-8788, 2020 | 40 | 2020 |
| Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge Materials HJK S.-H. Kim, S. K. Kim, J.-P. Shim, D.-M. Geum, G. W. Ju, H.-S. Kim, H.-J ... IEEE J. Electron Devices Soc. 6, 579-587, 2018 | 35 | 2018 |
| Substrate and layout engineering to suppress self-heating in floating body transistors SH Shin, SH Kim, S Kim, H Wu, PD Ye, MA Alam 2016 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2016 | 31 | 2016 |
| Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems DM Geum, SH Kim, SK Kim, SS Kang, JH Kyhm, J Song, WJ Choi, E Yoon Scientific Reports 9 (1), 18661, 2019 | 23 | 2019 |
| Fabrication and characterization of Pt/Al2O3/Y2O3/In0. 53Ga0. 47As MOSFETs with low interface trap density SK Kim, DM Geum, JP Shim, CZ Kim, H Kim, JD Song, WJ Choi, SJ Choi, ... Applied Physics Letters 110 (4), 2017 | 22 | 2017 |
| 3D stackable synaptic transistor for 3D integrated artificial neural networks SK Kim, YJ Jeong, P Bidenko, HR Lim, YR Jeon, H Kim, YJ Lee, ... ACS applied materials & interfaces 12 (6), 7372-7380, 2020 | 21 | 2020 |
| Highly stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for monolithic 3-D integration of InGaAs MOSFETs S Kim, SK Kim, S Shin, JH Han, DM Geum, JP Shim, S Lee, H Kim, G Ju, ... IEEE Journal of the Electron Devices Society 7, 869-877, 2019 | 21 | 2019 |
| Heterogeneous and monolithic 3d integration of III–V-based radio frequency devices on Si CMOS circuits J Jeong, SK Kim, J Kim, DM Geum, D Kim, E Jo, H Jeong, J Park, JH Jang, ... ACS nano 16 (6), 9031-9040, 2022 | 20 | 2022 |
| Stackable InGaAs-on-insulator HEMTs for monolithic 3-D integration J Jeong, SK Kim, J Kim, DM Geum, J Park, JH Jang, S Kim IEEE Transactions on Electron Devices 68 (5), 2205-2211, 2021 | 18 | 2021 |
| Fabrication of InGaAs-on-insulator substrates using direct wafer-bonding and epitaxial lift-off techniques SK Kim, JP Shim, DM Geum, CZ Kim, HS Kim, JD Song, SJ Choi, DH Kim, ... IEEE Transactions on Electron Devices 64 (9), 3601-3608, 2017 | 18 | 2017 |
| Monolithic 3D integration of InGaAs photodetectors on Si MOSFETs using sequential fabrication process DM Geum, SK Kim, S Lee, D Lim, HJ Kim, CH Choi, SH Kim IEEE Electron Device Letters 41 (3), 433-436, 2020 | 17 | 2020 |
| Photo-responsible synapse using Ge synaptic transistors and GaAs photodetectors SK Kim, DM Geum, HR Lim, JH Han, H Kim, YJ Jeong, SH Kim IEEE Electron Device Letters 41 (4), 605-608, 2020 | 15 | 2020 |
| Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With … SK S. K. Kim, J.-P. Shim, D.-M. Geum, J. Kim, C. Z. Kim, H.-S. Kim, J. D ... IEEE Trans. Electron Devices 65 (5), 1862-1867, 2018 | 15 | 2018 |
| Modeling and characterization of the abnormal hump in n-channel amorphous-InGaZnO thin-film transistors after high positive bias stress J Lee, S Choi, SK Kim, SJ Choi, DH Kim, J Park, DM Kim IEEE Electron Device Letters 36 (10), 1047-1049, 2015 | 15 | 2015 |
| Cost-effective fabrication of In0.53Ga0.47As-on-insulator on Si for monolithic 3D via novel epitaxial lift-off (ELO) and donor wafer re-use SK Kim, J Shim, DM Geum, CZ Kim, HS Kim, YS Kim, HK Kang, JD Song, ... 2016 IEEE International Electron Devices Meeting (IEDM), 25.4. 1-25.4. 4, 2016 | 14 | 2016 |
| Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si HJK J.-P. Shim, S. K. Kim, H. Kim, G. Ju, H. Lim, S. Kim APL Materials 6, 016103, 2018 | 12 | 2018 |
| Dielectric-engineered high-speed, low-power, highly reliable charge trap flash-based synaptic device for neuromorphic computing beyond inference JP Kim, SK Kim, S Park, S Kuk, T Kim, BH Kim, SH Ahn, YH Cho, ... Nano Letters 23 (2), 451-461, 2023 | 10 | 2023 |
| Vertical InGaAs biristor for sub-1 V operation WK Kim, P Bidenko, J Kim, J Sim, JK Han, S Kim, DM Geum, S Kim, ... IEEE Electron Device Letters 42 (5), 681-683, 2021 | 10 | 2021 |
| Impact of bottom-gate biasing on implant-free junctionless Ge-on-insulator n-MOSFETs HR Lim, SK Kim, JH Han, H Kim, DM Geum, YJ Lee, BK Ju, HJ Kim, S Kim IEEE Electron Device Letters 40 (9), 1362-1365, 2019 | 10 | 2019 |
Sanghyeon Kim, S. Kim, S.-H. Kim, S....KAIST, Korea Institute of Science and Technology (KIST), imec, The University of TokyoVerified email at kaist.ac.kr
