Patrick H Carey IV
Patrick H Carey IV
Verified email at ufl.edu
TitleCited byYear
A review of Ga2O3 materials, processing, and devices
SJ Pearton, J Yang, PH Cary IV, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 011301, 2018
3212018
Band alignment of Al2O3 with (− 201) β-Ga2O3
PH Carey IV, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata
Vacuum 142, 52-57, 2017
302017
Band alignment of atomic layer deposited SiO2 and HfSiO4 with β-Ga2O3
PH Carey IV, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata
Japanese Journal of Applied Physics 56 (7), 071101, 2017
262017
Conduction and valence band offsets of LaAl2O3 with (−201) β-Ga2O3
PH Carey IV, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata
Journal of Vacuum Science & Technology B, Nanotechnology and…, 2017
222017
Valence and conduction band offsets in AZO/Ga2O3 heterostructures
PH Carey IV, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata
Vacuum 141, 103-108, 2017
192017
Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au
PH Carey IV, J Yang, F Ren, DC Hays, SJ Pearton, S Jang, A Kuramata, ...
AIP Advances 7 (9), 095313, 2017
182017
Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers
PH Carey IV, J Yang, F Ren, DC Hays, SJ Pearton, A Kuramata, ...
Journal of Vacuum Science & Technology B, Nanotechnology and…, 2017
172017
Band offsets in ITO/Ga2O3 heterostructures
PH Carey IV, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata
Applied Surface Science 422, 179-183, 2017
152017
Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures
J Yang, P Carey IV, F Ren, YL Wang, ML Good, S Jang, MA Mastro, ...
Applied Physics Letters 111 (20), 202104, 2017
82017
Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays
J Yang, M Xian, P Carey, C Fares, J Partain, F Ren, M Tadjer, E Anber, ...
Applied Physics Letters 114 (23), 232106, 2019
32019
Operation Up to 500 C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors
PH Carey, F Ren, AG Baca, BA Klein, AA Allerman, AM Armstrong, ...
IEEE Journal of the Electron Devices Society 7, 444-452, 2019
32019
Comparison of Dual-Stack Dielectric Field Plates on β-Ga2O3 Schottky Rectifiers
PH Carey, J Yang, F Ren, R Sharma, M Law, SJ Pearton
ECS Journal of Solid State Science and Technology 8 (7), Q3221-Q3225, 2019
32019
Zika virus detection using antibody-immobilized disposable cover glass and AlGaN/GaN high electron mobility transistors
J Yang, P Carey IV, F Ren, MA Mastro, K Beers, SJ Pearton, II Kravchenko
Applied Physics Letters 113 (3), 032101, 2018
32018
Defects at the surface of -Ga2O3 produced by Ar plasma exposure
AY Polyakov, IH Lee, NB Smirnov, EB Yakimov, IV Shchemerov, ...
APL Materials 7 (6), 061102, 2019
22019
Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra
AY Polyakov, IH Lee, NB Smirnov, EB Yakimov, IV Shchemerov, ...
Applied Physics Letters 115 (3), 032101, 2019
12019
Band alignments of dielectrics on (− 201) β-Ga2O3
PH Carey IV, F Ren, D Hays, BP Gila, S Pearton
Gallium Oxide, 287-311, 2019
12019
Exploration of Process Techniques for Ga2O3 Based Electronics
F Ren, SJ Pearton, J Yang, P Carey, S Ahn, R Khanna, K Bevlin, ...
Meeting Abstracts, 1419-1419, 2018
12018
Radiation Damage Effects in Ga2O3 Materials and Devices
C Fares, P Carey, J Yang, M Xian, F Ren, J Kim, A Polyakov, SJ Pearton
2019 AIChE Annual Meeting, 2019
2019
Investigation of Process Techniques for Ga2O3 Based Diodes
F Ren, J Yang, P Carey, C Fares, M Xian, SJ Pearton, M Tadjer
2019 AIChE Annual Meeting, 2019
2019
30 a Forward Current with 240 V Reverse Breakdown Ga2O3 Field-Plated Schottky Rectifiers
J Yang, M Xian, P Carey, C Fares, J Partain, F Ren, M Tadjer, SJ Pearton, ...
2019 AIChE Annual Meeting, 2019
2019
The system can't perform the operation now. Try again later.
Articles 1–20