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Paul B Fischer
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Single‐domain magnetic pillar array of 35 nm diameter and 65 Gbits/in. 2 density for ultrahigh density quantum magnetic storage
SY Chou, MS Wei, PR Krauss, PB Fischer
Journal of Applied Physics 76 (10), 6673-6675, 1994
4851994
3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact …
HW Then, S Dasgupta, M Radosavljevic, P Agababov, I Ban, R Bristol, ...
2019 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2019
2022019
300mm heterogeneous 3D integration of record performance layer transfer germanium PMOS with silicon NMOS for low power high performance logic applications
W Rachmady, A Agrawal, SH Sung, G Dewey, S Chouksey, B Chu-Kung, ...
2019 IEEE International Electron Devices Meeting (IEDM), 29.7. 1-29.7. 4, 2019
2012019
Study of nanoscale magnetic structures fabricated using electron‐beam lithography and quantum magnetic disk
SY Chou, M Wei, PR Krauss, PB Fischer
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
1381994
10 nm electron beam lithography and sub‐50 nm overlay using a modified scanning electron microscope
PB Fischer, SY Chou
Applied physics letters 62 (23), 2989-2991, 1993
1381993
Circulating T cell subpopulations correlate with immune responses at the tumor site and clinical response to PD1 inhibition in non-small cell lung cancer
N Manjarrez-Orduño, LC Menard, S Kansal, P Fischer, B Kakrecha, ...
Frontiers in immunology 9, 1613, 2018
1182018
Method and apparatus for endpoint detection in a chemical/mechanical process for polishing a substrate
LD Yau, PB Fischer
US Patent 5,595,526, 1997
821997
Tera‐hertz GaAs metal‐semiconductor‐metal photodetectors with 25 nm finger spacing and finger width
SY Chou, Y Liu, PB Fischer
Applied physics letters 61 (4), 477-479, 1992
791992
Fabrication of single‐domain magnetic pillar array of 35 nm diameter and 65 Gbits/in.2 density
PR Krauss, PB Fischer, SY Chou
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
771994
Sub‐50 nm high aspect‐ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion etching
PB Fischer, SY Chou
Applied physics letters 62 (12), 1414-1416, 1993
731993
Ultrahigh resolution magnetic force microscope tip fabricated using electron beam lithography
PB Fischer, MS Wei, SY Chou
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
721993
10 nm Si pillars fabricated using electron‐beam lithography, reactive ion etching, and HF etching
PB Fischer, K Dai, E Chen, SY Chou
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
681993
A 90 nm communication technology featuring SiGe HBT transistors, RF CMOS, precision R-L-C RF elements and 1 /spl mu/m2 6-T SRAM cell
K Kuhn, M Agostinelli, S Ahmed, S Chambers, S Cea, S Christensen, ...
Digest. International Electron Devices Meeting,, 73-76, 2002
532002
Gallium nitride and silicon transistors on 300 mm silicon wafers enabled by 3-D monolithic heterogeneous integration
HW Then, M Radosavljevic, K Jun, P Koirala, B Krist, T Talukdar, ...
IEEE Transactions on Electron Devices 67 (12), 5306-5314, 2020
502020
Renal cell carcinoma (RCC) tumors display large expansion of double positive (DP) CD4+ CD8+ T cells with expression of exhaustion markers
LC Menard, P Fischer, B Kakrecha, PS Linsley, E Wambre, MC Liu, ...
Frontiers in immunology 9, 2728, 2018
472018
Deconvolution of magnetic force images by Fourier analysis
T Chang, M Lagerquist, JG Zhu, JH Judy, PB Fischer, SY Chou
IEEE transactions on magnetics 28 (5), 3138-3140, 1992
421992
Process integration and future outlook of 2D transistors
KP O’Brien, CH Naylor, C Dorow, K Maxey, AV Penumatcha, A Vyatskikh, ...
nature communications 14 (1), 6400, 2023
412023
Integrated circuit structures
B Block, VR Rao, P Morrow, R Mehandru, D Ingerly, K Jun, K O'brien, ...
US Patent 10,872,820, 2020
402020
Advanced scaling of enhancement mode high-K gallium nitride-on-300mm-Si (111) transistor and 3D layer transfer GaN-silicon finfet CMOS integration
HW Then, M Radosavljevic, P Koirala, N Thomas, N Nair, I Ban, ...
2021 IEEE International Electron Devices Meeting (IEDM), 11.1. 1-11.1. 4, 2021
392021
GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX
K Nomoto, R Chaudhuri, SJ Bader, L Li, A Hickman, S Huang, H Lee, ...
2020 IEEE International Electron Devices Meeting (IEDM), 8.3. 1-8.3. 4, 2020
372020
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