| Core–Shell CuCo2O4@MnO2 Nanowires on Carbon Fabrics as High‐Performance Materials for Flexible, All‐Solid‐State, Electrochemical Capacitors Q Wang, J Xu, X Wang, B Liu, X Hou, G Yu, P Wang, D Chen, G Shen ChemElectroChem 1 (3), 559-564, 2014 | 168 | 2014 |
| Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ... IEEE Transactions on Nuclear Science 65 (1), 164-174, 2017 | 108 | 2017 |
| Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ... IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018 | 56 | 2018 |
| Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs R Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ... IEEE Transactions on Nuclear Science 64 (1), 218-225, 2016 | 53 | 2016 |
| Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics M Gorchichko, Y Cao, EX Zhang, D Yan, H Gong, SE Zhao, P Wang, ... IEEE Transactions on Nuclear Science 67 (1), 245-252, 2019 | 43 | 2019 |
| Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2Gate Dielectrics CD Liang, R Ma, Y Su, A O’Hara, EX Zhang, ML Alles, P Wang, SE Zhao, ... IEEE Transactions on Nuclear Science 65 (6), 1227-1238, 2018 | 43 | 2018 |
| 1/ Noise in As-Processed and Proton-Irradiated AlGaN/GaN HEMTs Due to Carrier Number Fluctuations P Wang, R Jiang, J Chen, EX Zhang, MW McCurdy, RD Schrimpf, ... IEEE Transactions on Nuclear Science 64 (1), 181-189, 2016 | 43 | 2016 |
| Total-ionizing-dose response of highly scaled gate-all-around Si nanowire CMOS transistors M Gorchichko, EX Zhang, P Wang, S Bonaldo, RD Schrimpf, RA Reed, ... IEEE Transactions on Nuclear Science 68 (5), 687-696, 2021 | 23 | 2021 |
| Gate bias and length dependences of total ionizing dose effects in InGaAs FinFETs on bulk Si SE Zhao, S Bonaldo, P Wang, R Jiang, H Gong, EX Zhang, N Waldron, ... IEEE Transactions on Nuclear Science 66 (7), 1599-1605, 2019 | 23 | 2019 |
| Radiation-induced charge trapping and low-frequency noise of graphene transistors P Wang, C Perini, A O’Hara, BR Tuttle, EX Zhang, H Gong, C Liang, ... IEEE Transactions on Nuclear Science 65 (1), 156-163, 2017 | 23 | 2017 |
| X-ray and proton radiation effects on 40 nm CMOS physically unclonable function devices PF Wang, EX Zhang, KH Chuang, W Liao, H Gong, P Wang, CN Arutt, ... IEEE Transactions on Nuclear Science 65 (8), 1519-1524, 2018 | 16 | 2018 |
| Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS2-Interlayer-MoS2 Tunneling Junctions P Wang, CJ Perini, A O’Hara, H Gong, P Wang, EX Zhang, MW McCurdy, ... IEEE Transactions on Nuclear Science 66 (1), 420-427, 2018 | 10 | 2018 |
| Low-frequency noise and defects in copper and ruthenium resistors DM Fleetwood, S Beyne, R Jiang, SE Zhao, P Wang, S Bonaldo, ... Applied Physics Letters 114 (20), 2019 | 9 | 2019 |
| Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics P Wang, H Kalita, A Krishnaprasad, D Dev, A O’Hara, R Jiang, E Zhang, ... IEEE Transactions on Nuclear Science 66 (7), 1584-1591, 2018 | 9 | 2018 |
| Zs. Tőkei, I. De Wolf, K. Croes, EX Zhang, ML Alles, RD Schrimpf, RA Reed and D. Linten DM Fleetwood, S Beyne, R Jiang, SE Zhao, P Wang, S Bonaldo, ... Appl. Phys. Lett 114, 203501, 2019 | 8 | 2019 |
| Radiation-induced charge trapping in black phosphorus MOSFETs with HfO 2 gate dielectrics CD Liang, P Wang, SM Zhao, EX Zhang, ML Alles, DM Fleetwood, ... IEEE Trans. Nucl. Sci. 65 (6), 1227-1238, 2018 | 8 | 2018 |
| Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs R Jiang, EX Zhang, X Shen, J Chen, K Ni, P Wang, DM Fleetwood, ... 2016 16th European Conference on Radiation and Its Effects on Components and …, 2016 | 7 | 2016 |
| 1/f noise in GaN/AlGaN HEMTs DM Fleetwood, P Wang, J Chen, R Jiang, EX Zhang, MW McCurdy, ... 2016 13th IEEE International Conference on Solid-State and Integrated …, 2016 | 5 | 2016 |
| Comparing the TID-induced RF performance degradation of floating body and body contacted 130 nm SOI NMOS transistors H Ge, EX Zhang, J Chen, L Xu, S Wang, Z Chai, P Wang, DM Fleetwood Microelectronics Reliability 104, 113547, 2020 | 4 | 2020 |
| Total-Ionizing-Dose Effects on Al/SiO2Bimorph Electrothermal Microscanners W Liao, EX Zhang, ML Alles, AL Sternberg, CN Arutt, D Wang, SE Zhao, ... IEEE Transactions on Nuclear Science 65 (8), 2260-2267, 2018 | 2 | 2018 |
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityVerified email at vanderbilt.edu
