| The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors KH Lee, JS Jung, KS Son, JS Park, TS Kim, R Choi, JK Jeong, JY Kwon, ... Applied Physics Letters 95 (23), 2009 | 366 | 2009 |
| Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors KH Ji, JI Kim, HY Jung, SY Park, R Choi, UK Kim, CS Hwang, D Lee, ... Applied Physics Letters 98 (10), 2011 | 314 | 2011 |
| Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning PD Kirsch, P Sivasubramani, J Huang, CD Young, MA Quevedo-Lopez, ... Applied Physics Letters 92 (9), 2008 | 215 | 2008 |
| Bonding states and electrical properties of ultrathin gate dielectrics CS Kang, HJ Cho, K Onishi, R Nieh, R Choi, S Gopalan, S Krishnan, ... Applied Physics Letters 81 (14), 2593-2595, 2002 | 209 | 2002 |
| The effect of interfacial layer properties on the performance of Hf-based gate stack devices G Bersuker, CS Park, J Barnett, PS Lysaght, PD Kirsch, CD Young, ... Journal of Applied Physics 100 (9), 2006 | 196 | 2006 |
| Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics YG Lee, CG Kang, UJ Jung, JJ Kim, HJ Hwang, HJ Chung, S Seo, R Choi, ... Applied Physics Letters 98 (18), 2011 | 180 | 2011 |
| Mechanism of Electron Trapping and Characteristics of Traps in Gate Stacks G Bersuker, JH Sim, CS Park, CD Young, SV Nadkarni, R Choi, BH Lee IEEE Transactions on Device and Materials Reliability 7 (1), 138-145, 2007 | 175 | 2007 |
| Bias-temperature instabilities of polysilicon gate HfO/sub 2/MOSFETs K Onishi, R Choi, CS Kang, HJ Cho, YH Kim, RE Nieh, J Han, ... IEEE Transactions on Electron Devices 50 (6), 1517-1524, 2003 | 170 | 2003 |
| MOSFET devices with polysilicon on single-layer HfO/sub 2/high-K dielectrics L Kang, K Onishi, Y Jeon, BH Lee, C Kang, WJ Qi, R Nieh, S Gopalan, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 153 | 2000 |
| The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode CS Kang, HJ Cho, R Choi, YH Kim, CY Kang, SJ Rhee, C Choi, MS Akbar, ... IEEE transactions on electron devices 51 (2), 220-227, 2004 | 138 | 2004 |
| A capacitance-based methodology for work function extraction of metals on high-/spl kappa R Jha, J Gurganos, YH Kim, R Choi, J Lee, V Misra IEEE Electron Device Letters 25 (6), 420-423, 2004 | 137 | 2004 |
| The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor JY Kwon, JS Jung, KS Son, KH Lee, JS Park, TS Kim, JS Park, R Choi, ... Applied Physics Letters 97 (18), 2010 | 136 | 2010 |
| Improvement of surface carrier mobility of HfO/sub 2/MOSFETs by high-temperature forming gas annealing K Onishi, CS Kang, R Choi, HJ Cho, S Gopalan, RE Nieh, SA Krishnan, ... IEEE Transactions on Electron Devices 50 (2), 384-390, 2003 | 130 | 2003 |
| Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8/spl Aring/-12/spl Aring/) BH Lee, R Choi, L Kang, S Gopalan, R Nieh, K Onishi, Y Jeon, WJ Qi, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 130 | 2000 |
| Radiation Induced Charge Trapping in Ultrathin -Based MOSFETs SK Dixit, XJ Zhou, RD Schrimpf, DM Fleetwood, ST Pantelides, R Choi, ... IEEE Transactions on Nuclear Science 54 (6), 1883-1890, 2007 | 124 | 2007 |
| Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications CS Kang, HJ Cho, YH Kim, R Choi, K Onishi, A Shahriar, JC Lee Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 124 | 2003 |
| High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by post-deposition anneal MS Akbar, S Gopalan, HJ Cho, K Onishi, R Choi, R Nieh, CS Kang, ... Applied physics letters 82 (11), 1757-1759, 2003 | 104 | 2003 |
| High-quality ultra-thin HfO/sub 2/gate dielectric MOSFETs with TaN electrode and nitridation surface preparation R Choi, CS Kang, BH Lee, K Onishi, R Nieh, S Gopalan, E Dharmarajan, ... 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2001 | 99 | 2001 |
| High-k dielectrics and MOSFET characteristics JC Lee, HJ Cho, CS Kang, S Rhee, YH Kim, R Choi, CY Kang, C Choi, ... IEEE International Electron Devices Meeting 2003, 4.4. 1-4.4. 4, 2003 | 92 | 2003 |
| Evaluation of silicon surface nitridation effects on ultra-thin gate dielectrics R Nieh, R Choi, S Gopalan, K Onishi, CS Kang, HJ Cho, S Krishnan, ... Applied physics letters 81 (9), 1663-1665, 2002 | 89 | 2002 |
