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William S. Wong
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Flexible electronics: materials and applications
WS Wong, A Salleo
Springer Science & Business Media, 2009
9082009
Separation of thin films from transparent substrates by selective optical processing
NW Cheung, TD Sands, WS Wong
US Patent 6,071,795, 2000
8042000
Damage-free separation of GaN thin films from sapphire substrates
WS Wong, T Sands, NW Cheung
Applied Physics Letters 72 (5), 599-601, 1998
5331998
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ...
Applied physics letters 75 (10), 1360-1362, 1999
4681999
All jet-printed polymer thin-film transistor active-matrix backplanes
AC Arias, SE Ready, R Lujan, WS Wong, KE Paul, A Salleo, ML Chabinyc, ...
Applied Physics Letters 85 (15), 3304-3306, 2004
3582004
Flexible image sensor array with bulk heterojunction organic photodiode
TN Ng, WS Wong, ML Chabinyc, S Sambandan, RA Street
Applied Physics Letters 92 (21), 2008
3402008
Separation of thin films from transparent substrates by selective optical processing
NW Cheung, TD Sands, WS Wong
US Patent 6,420,242, 2002
3252002
3D printing: an emerging tool for novel microfluidics and lab-on-a-chip applications
AA Yazdi, A Popma, W Wong, T Nguyen, Y Pan, J Xu
Microfluidics and Nanofluidics 20, 1-18, 2016
3052016
Jet printing flexible displays
RA Street, WS Wong, SE Ready, ML Chabinyc, AC Arias, S Limb, ...
Materials Today 9 (4), 32-37, 2006
2942006
light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ...
Applied Physics Letters 77 (18), 2822-2824, 2000
2552000
Additive jet printing of polymer thin-film transistors
KE Paul, WS Wong, SE Ready, RA Street
Applied Physics Letters 83 (10), 2070-2072, 2003
2532003
Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
NW Cheung, TD Sands, WS Wong
US Patent 6,335,263, 2002
2272002
Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
NW Cheung, TD Sands, WS Wong
US Patent 6,335,263, 2002
2272002
Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
NW Cheung, TD Sands, WS Wong
US Patent 6,335,263, 2002
2272002
Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
WS Wong, MA Kneissl
US Patent 6,562,648, 2003
1962003
Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
WS Wong, MA Kneissl
US Patent 6,562,648, 2003
1962003
Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
WS Wong, MA Kneissl
US Patent 6,562,648, 2003
1962003
Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate
P Perlin, L Mattos, NA Shapiro, J Kruger, WS Wong, T Sands, NW Cheung, ...
Journal of Applied Physics 85 (4), 2385-2389, 1999
1371999
The de novo cytosine methyltransferase DRM2 requires intact UBA domains and a catalytically mutated paralog DRM3 during RNA–directed DNA methylation in Arabidopsis thaliana
IR Henderson, A Deleris, W Wong, X Zhong, HG Chin, GA Horwitz, ...
PLoS genetics 6 (10), e1001182, 2010
1322010
Superlattice strain relief layer for semiconductor devices
WS Wong, MA Kneissl, Z Yang, M Teepe, C Knollenberg
US Patent 7,547,925, 2009
1302009
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